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铁道科学与工程学报

JOURNAL OF RAILWAY SCIENCE AND ENGINEERING

Vol. 17    No. 3    June 2007

    

    

Fabrication and structure characterization of ITO transparent conducting film by sol-gel technique
LI Zhi-hua(李芝华)1, REN Dong-yan(任冬燕)2

1. School of Materials Science and Engineering, Central South University, Changsha 410083, China;
2. Department of Materials Engineering, Mianyang Vocational and Technical College, Mianyang 621000, China

Abstract:Using In(NO3)3∙5H2O and acetylacetone as raw materials and anhydrous SnCl4 as dopant, the transparent conducting indium tin oxide(ITO) films were prepared by sol-gel and dip-coating technique. The phase transformation, structure properties and physical properties (sheet resistance and transmittance) of the films were investigated by DTA-TG, XRD, SEM, four-probe method and UV-Vis spectrometry. The results indicate that it is feasible to fabricate ITO films on the quartz substrates by sol-gel technique, and the ITO films are formed by accumulating of particles with the size of several decades of nanometers. The prepared ITO film has cubic bixbyite structure, and (111) is its preferred plane. After five-times dip-coating, the ITO film has a thickness less than 150 nm, a sheet resistance of 110 Ω/□, a resistivity of 1.65×10−3 Ω∙cm and a transparency of 90%.

 

Key words: indium tin oxide; sol-gel; structure characterization; fabrication

ISSN 1672-7029
CN 43-1423/U

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