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铁道科学与工程学报

JOURNAL OF RAILWAY SCIENCE AND ENGINEERING

Vol. 16    No. 1    February 2006

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Preparation of nanometer δ- and β-bismuth trioxide by vacuum vapor-phase oxidation
HU Han-xiang(胡汉祥)1, 2, QIU Ke-qiang(丘克强)1, XU Guo-fu(徐国富)3

1. School of Chemistry and Chemical Engineering, Central South University, Changsha 410083, China;
2. Department of Chemistry and Chemical Engineering, Hunan Building Materials College, Hengyang 421008, China;
3. School of Materials Science and Engineering, Central South University, Changsha 410083, China
Received 19 September 2005; accepted 14 October 2005

Abstract: A stable δ- and β-bismuth trioxide was prepared at room temperature by vacuum vapor-phase oxidation. The average crystal size of products was 14.6 nm (by XRD), the d(0.5) value was in the range from 62 nm to 69 nm, and geometric standard deviation(GSD) was from 1.42 to 1.64. The results show that δ-Bi2O3 is formed when quenching rates is rapid and β-Bi2O3 is formed when it is slow. The size of grains increases with rising reaction temperature, flow rate of carrier gas, residual pressure of system and longer growing time of grains.

 

Key words: δ- bismuth trioxide; β-bismuth trioxide; vacuum vapor-phase oxidation; nanometer particles

ISSN 1672-7029
CN 43-1423/U

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