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铁道科学与工程学报

JOURNAL OF RAILWAY SCIENCE AND ENGINEERING

Vol. 15    No. 1    February 2005

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Microstructure of ternary Zn1-xCdxO films on silicon substrate
LU Huan-ming(卢焕明), YE Zhi-zhen(叶志镇), MA De-wei(马德伟),
HUANG Jing-yun(黄靖云), ZHU Li-ping(朱丽萍), ZHAO Bing-hui(赵炳辉)

State Key Laboratory of Silicon Materials, Zhejiang University, 
Hangzhou 310027, China

Abstract:Ternary Zn1-xCdxO alloying films were deposited on silicon substrates by a reactive magnetron sputtering method. The structures of the films were characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD) analysis, respectively. The XRD measurement shows that the wurtzite-type structure of Zn1-xCdxO can be stabilized up to Cd content of x=0.53 without a cubic CdO phase separation. The TEM measurement shows that the films have a columnar structure and the grains are highly c-axis oriented perpendicularly on silicon substrate although some grain boundaries are slightly tilted. High resolution TEM observation indicates that a native layer of amorphous SiO2 exists at the ZnCdO/Si interface and that ZnCdO grains with c-axis preferred orientation nucleate directly on substrate surface.

 

Key words: ZnCdO; microstructure; sputtering

ISSN 1672-7029
CN 43-1423/U

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