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铁道科学与工程学报

JOURNAL OF RAILWAY SCIENCE AND ENGINEERING

Vol. 15    No. 4    August 2005

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Sputter-deposited TiNiPd alloy films on Si wafer
QIAN Shi-qiang(钱士强)1,2,  WU Jian-sheng(吴建生)1

1. School of Materials Science and Engineering,  Shanghai Jiaotong University, Shanghai 200030, China; 
2. School of Materials Engineering, Shanghai University of Engineering Science, Shanghai 200336,  China

Abstract: Amorphous , thin films of Ti51.78Ni22.24Pd25.98 alloys were deposited onto n-type(100) Si wafer by radio frequency magnetron sputtering. From X-ray diffraction patterns, the crystallization temperature of thin film on Si wafer is found to be higher than 553.1℃. The film heated at 750℃ for 1h quite crystallizes along with some precipitation, but at 550℃ it partially crystallizes. With heating for 50h at 450℃ before crystallization, the film will contain more B19′ phases after succeeding heat-treatment at 650℃, but less B19′ phases after 750℃ treatment are found.  The fracture morphology of the film heated at 550℃ shows a flat pattern with more steps, whereas that of the film preparing at 750℃ displays a well-defined fine granulation structure. 550℃-heated film is harder than as-deposited film because of good cohesion between film and Si wafer.

 

Key words: TiNiPd; thin film; sputter deposition; crystallization; martensitic transformation; fracture morphology; nano-hardness 

ISSN 1672-7029
CN 43-1423/U

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