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铁道科学与工程学报

JOURNAL OF RAILWAY SCIENCE AND ENGINEERING

Vol. 15    No. 6    December 2005

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Spin-valve magnetoresistance in Co/Si/(Co/Cu/Co) multilayers
SHEN Hong-lie(沈鸿烈), LI Guan-xiong(李冠雄) 

College of Materials Science and Technology, 
Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China

Abstract: A series of Co/Si/(Co/Cu/Co) multilayers and Co/Si/Co sandwiches were prepared by high vacuum electron-beam evaporation. It was found that a Si spacer (≥0.9nm) could greatly decrease the interlayer coupling in Co/Si/Co sandwiches and there was no magnetoresistance(MR) or spin-valve MR in them due to the high resistivity of Si spacer. While in Co/Si/(Co/Cu/Co) multilayers, we observed a spin-valve MR of about 0.5% through a nominal 2.7nm Si spacer at room temperature. The spin-valve MR in Co/Si/(Co/Cu/Co) multilayers was attributed to the enhanced spin polarization of conduction electrons caused by the top Co/Cu/Co sandwich with GMR mechanism and high spin-dependent scattering at Co/Cu interface.

 

Key words: spin-valve; magnetoresistance; multilayer; electron-beam evaporation 

ISSN 1672-7029
CN 43-1423/U

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