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铁道科学与工程学报

JOURNAL OF RAILWAY SCIENCE AND ENGINEERING

Vol. 19    No. 3    June 2009

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Preparation and properties of SiCN diffusion barrier layer for
Cu interconnect in ULSI
ZHOU Ji-cheng(周继承)1, SHI Zhi-jie(石之杰)2, ZHENG Xu-qiang(郑旭强)2

1. School of Energy Science and Engineering, Central South University, Changsha 410083, China;
2. School of Physical Science and Technology, Central South University, Changsha 410083, China

Abstract:SiCN thin films and Cu/SiCN/Si structures were fabricated by magnetron sputtering. And some samples underwent the rapid thermal annealing(RTA) processing. The thin-film surface morphology, crystal structure and electronic properties were characterized by atomic force microscopy(AFM), X-ray diffractometry(XRD), Fourier transform infrared transmission(FTIR) and four-point probe(FPP) analyses. The results reveal the formation of complex networks among the three elements, Si, C and N, and the existence of different chemical bonds in the SiCN films, such as Si—C, Si—N, C—N and C=N. The as-deposited SiCN thin films are amorphous in the Cu/SiCN/Si structures and have good thermal stability, and the SiCN thin films are still able to prevent the diffusion reaction between Cu and Si interface after RTA processing at 600 ℃ for 5 min.

 

Key words: SiCN thin film; magnetron sputtering; dielectric diffusion barrier; Cu interconnect for ULSI

ISSN 1672-7029
CN 43-1423/U

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