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铁道科学与工程学报

JOURNAL OF RAILWAY SCIENCE AND ENGINEERING

Vol. 19    No. 4    August 2009

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Effect of process parameters on electrical, optical properties of IZO films produced by inclination opposite target type DC magnetron sputtering
Do-Hoon SHIN1, Yun-Hae KIM2, Joong-Won HAN2, Kyung-Man MOON2, Ri-Ichi MURAKAMI3

1. Korean Air Aerospace Division, Korean Air Lines Co., 103 Daejeo 2-dong, Gangseo-gu, Busan, 618-142, Korea;
2. Department of Mechanical and Material Engineering, Korea Maritime University, Dongsam-dong,
Youngdo-ku, Busan, Korea;
3. Department of Mechanical Engineering, The University of Tokushima, 2-1 Minami-josanjima-cho,
Tokushima, 770-8506, Japan

Abstract:IZO films were deposited onto PET substrate at room temperature with the inclined opposite target type DC magnetron sputtering equipment, in which a sintered oxide IZO target (doped with 10% ZnO, packing density of 99.99%) was used. The effects of total sputtering pressure and film thickness on IZO films properties were studied. All the films produced at room temperature have a amorphous structure, irrespective of the total sputtering pressure and film thickness. A resistivity of the order of 10−4 Ω·cm was obtained for IZO films deposited at lower pressure (film thickness of 190 nm). The resistivity of IZO films deposited at room temperature depends on film thickness and shows a minimum at a thickness of 530 nm.

 

Key words: indium-zinc-oxide(IZO); inclination opposite target type DC magnetron sputtering; transparent conductive oxide(TCO); electromagnetic wave shielding effectiveness(SE)

ISSN 1672-7029
CN 43-1423/U

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