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铁道科学与工程学报

JOURNAL OF RAILWAY SCIENCE AND ENGINEERING

Vol. 11    No. 2    April 2001

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Characteristics of Cu implantation into Si by
PBII using UBMS cathode
YU Wei-dong(于伟东), XIA Li-fang(夏立芳), SUN Yue(孙 跃)

School of Materials Science and Engineering,
Harbin Instituteof Technology,Harbin 150001, P.R.China

Abstract:The implantation of Cu into Si substrate was carried out by plasmabased ion implantation (PBII) using unbalanced magnetron sputtering (UBMS) cathode as the metal plasma source. The different pulse bias ( Up ) and the distance between the cathode and the samples ( ds-t ) were chosen to research the characteristics of this method. The results show that the implantation of metal ions can be realized by the metal plasma source of UBMS cathode. The physical process such as the metal ion pure implantation, the gas ion implantation, the recoil implantation of the metal atoms, the deposition of the metal particles and the resputtering of the metal film depend on the energy, dose and deposition rate of the ions ( Cu+, Ar+ ). The metal plasma based ion implantation of Cu into Si substrate is favored by selecting higher Up (60 kV) and larger ds-t (200 mm).

 

Key words: unbalanced magnetron sputtering; plasmabased ion implantation; recoil implantation

ISSN 1672-7029
CN 43-1423/U

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