Transactions of Nonferrous Metals Society of China
JOURNAL OF RAILWAY SCIENCE AND ENGINEERING
|Vol. 11 No. 5 October 2001|
implanted silicon wafers
（State Key Laboratory for Powder Metallurgy,
Central South University,Changsha 410083, P.R.China）
Abstract: Thin p+ layers with good electrical properties were fabricated by RTA (rapid thermal annealing) with post-FA (furance annealing) of Si+/B+ dual implanted silicon wafers. The electrical and structural characteristics of thin p+ layers have been measured by FPP (four-point probe), SRP (spreading resistance probe), RBS/channelling. Optimizing the implantation and annealing processes, especially using the thermal cycle of RTA followed by FA, shallow p+n junctions can be fabricated, which shows excellent I-V characteristics with reversbias leakage current densities of 1.8nA/cm2at -1.4V.
Key words: rapid thermal annealing; dual ion implantation; silicon thin p+ layers