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铁道科学与工程学报

JOURNAL OF RAILWAY SCIENCE AND ENGINEERING

Vol. 11    No. 5    October 2001

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Characteristics of Si+/B+ dual
implanted silicon wafers
ZHOU Ji-cheng(周继承), HUANG Bai-yun(黄伯云)

State Key Laboratory for Powder Metallurgy,
Central South University,Changsha 410083, P.R.China

Abstract: Thin p+ layers with good electrical properties were fabricated by RTA (rapid thermal annealing) with post-FA (furance annealing) of Si+/B+ dual implanted silicon wafers. The electrical and structural characteristics of thin p+ layers have been measured by FPP (four-point probe), SRP (spreading resistance probe), RBS/channelling. Optimizing the implantation and annealing processes, especially using the thermal cycle of RTA followed by FA, shallow p+n junctions can be fabricated, which shows excellent I-V characteristics with reversbias leakage current densities of 1.8nA/cm2at -1.4V.

 

Key words:  rapid thermal annealing; dual ion implantation; silicon thin p+ layers

ISSN 1672-7029
CN 43-1423/U

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