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铁道科学与工程学报

JOURNAL OF RAILWAY SCIENCE AND ENGINEERING

Vol. 13    No. 4    August 2003

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Electrochemical characteristic of chemical-mechanical polishing of copper with oxide passive film
HE Han-wei(何捍卫)1, HU Yue-hua(胡岳华)2, ZHOU Ke-chao(周科朝)1,XIONG Xiang(熊 翔)1, HUANG Bai-yun(黄伯云)1

1. State Key Laboratory for Powder Metallurgy,
Central South University, Changsha 410083, China;
2. School of Resources Processing and Bioengineering,
Central South University, Changsha 410083, China

Abstract:Electrochemical behavior of chemical-mechanical polishing of copper with oxide passive film was studied by electrochemical measurement technologies. Dependences of polarization curves and electrochemical parameters, the rate of formation or removal of passive film of copper on film modifier KClO3 were investigated. The rules of dependences of corrosion potentials and corrosion current densities on polishing pressure and rotation rate were obtained. It is discovered that the rates of formation and removal of passive film of copper are enhanced, while the polishing pressure and rotation rate are reduced. The experiments show that the CMP processes decrease Tafel slope, increase electron transfer coefficient of anode reaction and decrease the activation energy of corrosion reaction of copper, thereby the corrosion processes are accelerated. The results indicate that CMP slurry recipe, which is composed of NaAc-NaOH medium, using KClO3 as passive film modifier and nano-sized γ-Al2O3 as abrasive, is feasible and reasonable. The technological conditions are 100r/min, 16kPa.

 

Key words:  oxide passive film; chemical-mechanical polishing; electrochemical characteristic

ISSN 1672-7029
CN 43-1423/U

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