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铁道科学与工程学报

JOURNAL OF RAILWAY SCIENCE AND ENGINEERING

Vol. 19    No. 6    December 2009

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Electroless deposition of W-doped Ag films onto p-Si(100) from diluted HF solution
YE Wei-chun(叶为春)1, MA Chuan-li(马传利)2, WANG Chun-ming(王春明)2, ZHOU Feng(周 峰)1

1. State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics,
Chinese Academy of Sciences, Lanzhou 730000, China;
2. Department of Chemistry, Lanzhou University, Lanzhou 730000, China

Abstract:Tungsten-doped silver films were prepared by immersing hydrogen-terminated silicon wafers into the solution of 2.5 mmol/L [Ag2WO4]+0.1 mol/L HF at 50 ℃. Their growth and composition were characterized with atomic force microscopy and X-ray photoelectron spectroscopy, respectively. The effect of tungstate ions on the deposition of silver was investigated by X-ray  diffraction (XRD) and scanning electron microscopy (SEM) by comparing W-doped Ag film with Ag film. It is found that the molar fraction of tungsten in the deposits is about 2.3% and the O to W molar ratio was about 4.0 and W-doped Ag films have good anti-corrosion in air at 350 ℃. The doping of tungsten cannot change the deposition of silver.

 

Key words: autocatalytic electroless deposition; W-doped Ag film; silicon; HF

ISSN 1672-7029
CN 43-1423/U

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