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铁道科学与工程学报

JOURNAL OF RAILWAY SCIENCE AND ENGINEERING

Vol. 9    No. 2    June 1999

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INFLUENCE OF NITROGEN ON THERMAL WARPAGE IN CZOCHRALSKI SILICON WAFERS
Lu Huanming

State Key Laboratory of Silicon Material Science,Zhejiang University, Hangzhou 310027, P. R. China

Abstract:The effect of nitrogen on thermal warpage in nitrogen-doped Czochralski (CZ) silicon wafers after heat treatment was studied. After preannealing at 1000℃for 6h, the warpage of the silicon wafers was suppressed during subsequent thermal warping test due to the formation of nitrogen-oxygen clusters with smaller size. After preannealing at 1 000℃for 16 h, the silicon wafers show a large increase during thermal warping test due to the large amount of oxygen precipitation. The results indicate that the nitrogen is very effective to increasing the mechanical strength of silicon wafers of CZ silicon at high temperature.

 

Key words: nitrogen thermal warpage mechanical strength silicon wafers

ISSN 1672-7029
CN 43-1423/U

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