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铁道科学与工程学报

JOURNAL OF RAILWAY SCIENCE AND ENGINEERING

Vol. 9    No. 2    June 1999

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NITROGEN-OXYGEN COMPLEXES IN SILICON AND THEIR DONOR ACTION
Liu Peidong and Li Xiaojun

State Key Laboratory of Silicon Material Science,Zhejiang University, Hangzhou 310027, P. R. China

Abstract:The electronic characteristic of nitrogen-doped CZ silicon is completely different from that of nitrogen-doped FZ silicon and nitrogen-undoped CZ silicon. It has been found that nitrogen-doped CZ silicon can generate a kind of nitrogen related new donor which forms and disappears with the formation and disappearance of nitrogen-oxygen complexes respectively. The relationship between the formation and disappearance of nitrogen-new donor and annealing condition was studied, and the experimental results were discussed.

 

Key words: nitrogen-oxygen complexes nitrogen-new donor CZ silicon

ISSN 1672-7029
CN 43-1423/U

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