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铁道科学与工程学报

JOURNAL OF RAILWAY SCIENCE AND ENGINEERING

Vol. 9    No. 3    September 1999

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TEM study on Si0.65Ge0.35/p-Si HIP infrared detector
Liu Ansheng(刘安生), Shao Beiling(邵贝羚), Liu Zheng(刘 峥), Wang Jing(王 敬)

General Research Institute for Nonferrous Metals, Beijing100088, P.R.China

Abstract:Microstructure of P+-Si0.65Ge0.35/p-Si HIP infrared detector has been studied by using localization cross-section transmission electron microscopy. The photosensitive region of the detector consists of 6 P+-Si0.65Ge0.35 layers and 5 UD-Si layers, which are flat and have thickness of 6nm and 32nm, respectively. A stress field exists on the interface between Si0.65Ge0.35 and UD-Si layers, but no any crystal defect has been found in this region, except the edges of this region. Both Si0.65Ge0.35 and UD-Si layers on amorphous SiO2 layer consist of polycrystals and are in wave. There is defect area in the edges of photosensitive region. The area appears in a shape of inverse triangle and the maximum width is less than 120 nm. The crystal defects are stacking faults and microtwins.

 

Key words: infrared detector; heterojunction semiconductor device; microstructure of semiconductor device; transmission electron microscopy

ISSN 1672-7029
CN 43-1423/U

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