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铁道科学与工程学报

JOURNAL OF RAILWAY SCIENCE AND ENGINEERING

Vol. 7    No. 1    March 1997

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TEM STUDY ON LOCALIZED RECRYSTALLIZATION SOI
Liu Ansheng1; Shao Beiling1; Li Yonghong1; Liu Zheng1 ; Zhang Pengfei2; Tsien Peixin2

1.General Research Institute for Non ferrous Metals; Beijing 100088;
2.Institute of Microelectronics; Tsinghua University; Beijing 100084

Abstract:Crystallographic orientations and characters of various defects (subgrain boundaries, dislocations etc.) in Si film of heat sink structure SOI (silicon on insulator) prepared by unseeded rapid zone melting recrystallization (ZMR) process with a RF induced graphite strip heater system have been studied with a TEM. The study shows that the process used in this experiment can effectively confine the defects in the predetermined regions of Si film strips on the thicker parts of the SiO 2 layer, and makes the other Si strips with a width of more than 50 μm defect free.

 

Key words: SOI(silicon on insulator) localized recrystallization crystallographic orientations characters defects TEM

ISSN 1672-7029
CN 43-1423/U

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