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铁道科学与工程学报

JOURNAL OF RAILWAY SCIENCE AND ENGINEERING

Vol. 17    Special 1    November 2007

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Microstructure and electrical properties of CeO2 ultra-thin filmsfor MFIS FeRAM applications
TANG Ming-hua(唐明华)1, 2, ZHOU Yi-chun(周益春)1, 2, ZHENG Xue-jun(郑学军)1, 2,
WEI Qiu-ping(魏秋平)3, CHENG Chuan-pin(成传品)1, 2, YE Zhi

1. Faculty of Materials and Optoelectric Physics, Xiangtan University, Xiangtan 411105, China;
2. Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education,
Xiangtan University, Xiangtan 411105, China;
3. School of Materials Science and Engineering, Central South University, Changsha 410083, China

Abstract:A detailed investigation about the dependence of microstructure and electrical properties on annealing temperature was carried out for cerium oxide(CeO2) ultra-thin films (18 nm to 110 nm) on n-type Si(100) substrates by RF magnetron sputtering. Substrate temperature was kept constant at 400 ℃ for all samples. The as-deposited films were subsequently annealed in air ambient at 700, 800 and 900 ℃ for 1 h respectively. The crystallinity and surface morphology of the CeO2 films were analyzed with X-ray diffractometer(XRD), scanning electron microscope(SEM), atomic force microscope(AFM) and Raman scattering measurement. Electrical properties of the Au/CeO2/Si/Au structure were examined by high frequency capacitance—voltage (C—V) characteristics at 1 MHz and leakage current density—electric field (J—E) characteristics. A Raman peak of the CeO2 thin films was seen at 463 cm−1. From C—V data, these films exhibit dielectric constants ranging from 18 to 23, the hysteresis width (ΔVFB) ranging from 0.015 V to 0.12 V and the density of trapped charges ranging from 1.45×1011 to 3.01×1011 cm−2. A leakage current of 4.75×10−8 −9.0×10−7 A/cm2 at  2 MV/cm was observed. The experimental results show that the CeO2 buffer layers are suitable for non-volatile metal- ferroelectric-insulator-semiconductor(MFIS) structure field-effect-transistors(FETs) memory applications.

 

Key words: CeO2 thin film; RF magnetron sputtering; microstructure and electrical properties; MFISFETs memory applications

ISSN 1672-7029
CN 43-1423/U

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