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铁道科学与工程学报

JOURNAL OF RAILWAY SCIENCE AND ENGINEERING

Vol. 17    Special 1    November 2007

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Simulation of electric properties of MFIS capacitor with
BNT ferroelectric thin film using Silvaco/Atlas
ZHENG Xue-jun(郑学军), ZHANG Jun-jie(张俊杰), ZHOU Yi-chun(周益春),
TANG Ming-hua(唐明华), YANG Bo(杨  博), CHEN Yi-qiang(陈义强)

1. Faculty of Materials, Optoelectronics & Physics, Xiangtan University, Xiangtan 411105, China;
2. Key Laboratory of Low Dimensional Materials & Application Technology,
Ministry of Education, Xiangtan University, Xiangtan 411105, China

Abstract:Metal-ferroelectric-insulator-silicon (MFIS) capacitors with Bi3.15Nd0.85Ti3O12 (BNT) ferroelectric thin film were simulated using a commercial software Silvaco/Atlas, and the effects of applied voltage and insulator layer on capacitance−voltage (C−V) hysteresis loops and memory windows were investigated. For the MFIS capacitors with CeO2 insulator, with the increase of applied voltage from 2 V to 15 V, the C−V loops become wider and memory windows increase from 0.15 V to 1.27 V. When the thickness of CeO2 layer increases from 1 nm to 5 nm at the applied voltage of 5 V, the C−V loops become narrower and the memory windows decrease from 1.09 V to 0.36 V. For MFIS capacitors with different insulator layers (CeO2, HfO2, Y2O3, Si3N4 and SiO2), the high dielectric constants can make the C−V loops wider and improve the capacitor’s memory window. The simulation results prove that Silvaco/Atlas is a powerful simulator for MFIS capacitor, and they are helpful to the fabrication of MFIS nonvolatile memory devices.

 

Key words: MFIS; BNT ferroelectric thin film; memory window; Silvaco/Atlas

ISSN 1672-7029
CN 43-1423/U

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