您目前所在的位置:首页 - 期刊简介 - 详细页面

铁道科学与工程学报

JOURNAL OF RAILWAY SCIENCE AND ENGINEERING

Vol. 17    Special 1    November 2007

[PDF Download]    [Flash Online]

    

Aluminum doping and dielectric properties of silicon carbide by CVD
LI Zhi-min(李智敏), SU Xiao-lei(苏晓磊), LUO Fa(罗  发),
 ZHU Dong-mei(朱冬梅), ZHOU Wan-cheng(周万城)

State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China

Abstract:Cubic β-SiC coating was grown onto the graphite substrate by the normal pressure chemical vapor deposition using CH3SiCl3 (MTS) as a source precursor at 1 150 ℃. But the hexagonal Al4SiC4 phase was generated in the doped process with trimethylaluminium (TMA) as the dopant. Microstructure of the deposit coating as-prepared was characterized by scanning electron microscope (SEM), which consists of spherical particles with a very dense facet structure. The real component of permittivity ε′ and dielectric loss tanδ of the coatings undoped and doped by TMA were carried out by a vector networ, k analyzer in the microwave frequency ranges from 8.2 GHz to 12.4 GHz. The results show that both of them have low values, and doped coating has lower ε′ and tan δ than undoped one due to the existence of Al4SiC4 impurity phase, which indicates that the desired Al/SiC solid solution at 1 150 ℃ in a normal argon atmosphere is not produced.

 

Key words: silicon carbide; aluminum doping; dielectric properties; chemical vapour deposition

ISSN 1672-7029
CN 43-1423/U

主管:中华人民共和国教育部 主办:中南大学 中国铁道学会 承办:中南大学
湘ICP备09001153号 版权所有:《铁道科学与工程学报》编辑部
------------------------------------------------------------------------------------------
地 址:湖南省长沙市韶山南路22号 邮编:410075
电 话:0731-82655133,82656174   传真:0731-82655133   电子邮箱:jrse@mail.csu.edu.cn