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铁道科学与工程学报

JOURNAL OF RAILWAY SCIENCE AND ENGINEERING

Vol. 17    Special 1    November 2007

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Vacuum distillation refining of metallurgical grade silicon (Ⅱ)
——Kinetics on removal of phosphorus from metallurgical grade silicon
MA Wen-hui(马文会)1, 2, WEI Kui-xian(魏奎先)1, 2, YANG Bin(杨 斌)1, 2,
LIU Da-chun(刘大春)1, 2, DAI Yong-nian(戴永年)1, 2

1. National Engineering Laboratory for Vacuum Metallurgy, Faculty for Materials and Metallurgical Engineering, Kunming University of Science and Technology, Kunming 650093, China;
2. Key Laboratory of Vacuum Metallurgy of Non-ferrous Metals of Yunnan Province, Kunming 650093, China

Abstract:The kinetics on vacuum refining process of metallurgical grade silicon was studied using maximum evaporation rate, critical pressure and mean free path of phosphorus in the metallurgical grade silicon at different temperatures. The behaviors of impurity phosphorus in the vacuum distillation process were examined in detail. The results show that the fractional vacuum distillation should be taken to obtain silicon with high purity. Impurity phosphorus volatilize with the maximum evaporation rate of 1.150×105− 1.585×106 g/(cm2·min) in the temperature range of 1 073−2 173 K and the pressure below 2.1 Pa. Because the value of wmax, P is at least 108 times of wmax, Si, Si hardly evaporates and remains in the residual, which indicates that phosphorus can be removed from metallurgical grade silicon (MG-Si) completely.

 

Key words: metallurgical grade silicon; solar grade silicon; vacuum distillation; kinetics; phosphorus removal

ISSN 1672-7029
CN 43-1423/U

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